Abstract: The greatest success of ion implantation has been achieved in the field of planar technology of semiconductor devices and integrated circuits. The development of devices with elements of nanoparticles, including the active region of which are metal nanoparticles in a dielectric matrix, has been greatly developed. The aim of the work is to simulate the process of ion implantation of a structure consisting of gold nanoparticles in a silicon dioxide matrix and calculations of the distribution of doping ions, cascades of displaced matrix ions and nanoparticles, as well as the distribution of ions reflected from the nanoparticles. The implantation conditions vary depending on the position of the projection of a point on the surface of the structure on the horizontal radius of the nanoparticle from the center to the periphery. A physical model of the process of ion implantation of gold nanoparticles located in a silicon dioxide matrix has been compiled. The process of ionic doping of the structure with boron and arsenic ions was simulated for different cross sections, and graphs of the distribution of doping ions, recoil atoms, reflected and sputtered ions were obtained depending on the coordinate from the center of the nanoparticle.

Abstract: The processes of formation of radiation-resistant heterostructures with required set of structural and electrophysical parameters, taking into account the influence of ionizing radiation effects, allowing to expand the field of their application and improve the reliability of electronic equipment are described. The influence of irradiation on the parameters of hetero- and semiconductor structures made according to various design-technological variants is studied. It is shown that the charge density in the dielectric increases with increasing dose of ionizing particles, reaches saturation at a dose of 108- 109 rad, and the value of the built-in charge and mechanical stresses in multilayer dielectric systems decrease due to the formation of an intermediate charge at the dielectric interface and the presence of a potential barrier between them. By adjusting the rate of introduction and characteristics of radiation centers during irradiation type, method of growing and the level of doping material, and the integrated flux density of the irradiation, the sample temperature during irradiation may purposefully alter the electrical properties of heterostructures and electrical parameters of devices and integrated circuits. Developed methods, for radiation resistant heterostructures forming, reduces charge formation at silicon-oxide interface. SOI technology on optimized structure, shows good results, even at high radiation doses. The resistance to the total dose of radiation rises by three orders of magnitude.

Abstract: Aluminum and its alloys are the main metallization materials. With an increase in degree of integration the role of interconnections rises: they occupy a growing area of the crystal, the density of the package increases, which leads to a decrease in the thickness and width of the conductive tracks. In nanodimensional structures the value of the current density sufficient for the development of electromigration effects occurs at currents of 50-100 mA. The article explores the factors affecting the mechanism of destruction of the integrated circuits' metallization due to electromigration. The author studies metallization lines at different stages of their destruction by electromigration with the help of raster scanning and transmission electron microscopes. In general, the main problem associated with high-temperature application of aluminum metallization is the large grain size and surface roughness, which makes alignment on such a metal layer difficult. The results of the experiments lead to the conclusion that geometric factors play a dominant role in the mechanism of destruction of metallization of integrated circuits due to electromigration.

Abstract: Aluminium with its alloys is the basic material of integrated circuits metallization. Use of VLSIC toughens the requirements to the parameters of metallization, which determine its reliability, such as surface resistance, step coating quality, number and sizes of tension-caused voids, and electromigration tolerance. Poor quality of metallization is one of the most dangerous defects in semiconductor technology of integrated circuits. Electromigration can cause failure when passing high-density current through metallization. The materials have been tested in order to estimate the intensity of metal resistance variation caused by electromigration. Based on the results of these tests, the authors conclude that geometrical factors play a dominant role in the mechanism of erosion of integrated circuits metallization caused by electromigration. With regard to the tests, the authors formulate recommendations about the transition from the sputtering technique to evaporation deposition. 

Abstract: The research is devoted to one of the physical nanoelectronic effect – resonant tunneling. The authors provide numerical calculations for constructing the MIS-structure based diod and modeling its characteristics. The metal-oxide-silicon semiconductor in the severe depletion mode next to the doped semiconductor has a similar structure. The authors establish the MIS-structure energy band diagram, define energy levels and wave functions of an electron in the quantum well and during tunneling and calcuate the probability of tunneling based on the amounnt of the voltage applied. In the course of calculations the authors use the PTC Mathcad Prime 3.1 visual environment for mathematical modeling and technical computing. The results of the computer modeling allow to define external limit voltage including the amount of voltage that leads to the dielectric breakdown. In addition, the authors define the qualitative dependency between the MIS-structure voltage and the height and width of the energy barrier. The model developed by the authors takes into account the joint influence of several factors which is proved by the coordination of recorded current voltrage characteristic with the experimental characteristics.