Abstract: The study of the degradation of metal-oxide semiconductor MOS structures with nitration of the gate oxide under the influence of hot electrons and ionizing radiation was carried out. Two factors were investigated that cause the degradation of MOS structures and on which nitration has a different effect. The results of ionizing irradiation on MOS structures with thermal nitration at different temperatures and duration of nitration and without nitration were obtained. It is shown that the temperature and duration of the nitration operation reduce the magnitude of the voltage change. The observed voltage changes may be due to an increase in the effect of electron traps, or a decrease in the effect of hole traps. The degradation of the characteristics of the devices under the influence of radioactive radiation and hot electrons substantially depend on the temperature and duration of thermal nitration. The risk of radiation exposure is constantly decreasing with increasing degree of nitration, and the risk of degradation under the action of hot electrons decreases with increasing degree of nitration, but with a further increase in the degree of nitration also increases.

Keywords: degradation, heat treatment, silicon dioxide, nitriding, MOS, VLSI technology, semiconductor device, hot electrons, radiation hardness, silicon oxide

Abstract: Due to the low power consumption, CMOS structures are preferred for creating large and ultra-large integrated circuits. However, the reliability of the circuits is largely limited by the latch phenomenon that occurs in CMOS structures. The electrical characteristic of the latch up phenomenon in a CMOS integrated circuit is characterized by the presence of a number of anomalous phenomena. These effects distort and make ambiguous the results of measuring the electrical sensitivity of the circuits to the latch. The development of microelectronics is constantly striving to reduce the size of the elements of integrated circuits, in particular transistors. Reducing the size of integrated circuits leads to the amplification of short-channel effects in MOS transistors. When reducing the size of integral elements, various options for scaling devices with a metal-oxide-semiconductor structure are considered. The mechanisms that cause the appearance of the snap-in do not depend on the conductivity type of the semiconductor region of the pocket.

Keywords: semiconductor, short channel effects, VLSI, scaling, MOS, latch up, transistor, nanoelectronic, failure, modeling

Abstract: The greatest success of ion implantation has been achieved in the field of planar technology of semiconductor devices and integrated circuits. The development of devices with elements of nanoparticles, including the active region of which are metal nanoparticles in a dielectric matrix, has been greatly developed. The aim of the work is to simulate the process of ion implantation of a structure consisting of gold nanoparticles in a silicon dioxide matrix and calculations of the distribution of doping ions, cascades of displaced matrix ions and nanoparticles, as well as the distribution of ions reflected from the nanoparticles. The implantation conditions vary depending on the position of the projection of a point on the surface of the structure on the horizontal radius of the nanoparticle from the center to the periphery. A physical model of the process of ion implantation of gold nanoparticles located in a silicon dioxide matrix has been compiled. The process of ionic doping of the structure with boron and arsenic ions was simulated for different cross sections, and graphs of the distribution of doping ions, recoil atoms, reflected and sputtered ions were obtained depending on the coordinate from the center of the nanoparticle.

Keywords: monocrystalline silicon, nanoparticle, silicon dioxide, modeling, semiconductor technology, integrated circuit, ion implantation, distribution profile, ion energy, reflected ions

Abstract: The processes of formation of radiation-resistant heterostructures with required set of structural and electrophysical parameters, taking into account the influence of ionizing radiation effects, allowing to expand the field of their application and improve the reliability of electronic equipment are described. The influence of irradiation on the parameters of hetero- and semiconductor structures made according to various design-technological variants is studied. It is shown that the charge density in the dielectric increases with increasing dose of ionizing particles, reaches saturation at a dose of 108- 109 rad, and the value of the built-in charge and mechanical stresses in multilayer dielectric systems decrease due to the formation of an intermediate charge at the dielectric interface and the presence of a potential barrier between them. By adjusting the rate of introduction and characteristics of radiation centers during irradiation type, method of growing and the level of doping material, and the integrated flux density of the irradiation, the sample temperature during irradiation may purposefully alter the electrical properties of heterostructures and electrical parameters of devices and integrated circuits. Developed methods, for radiation resistant heterostructures forming, reduces charge formation at silicon-oxide interface. SOI technology on optimized structure, shows good results, even at high radiation doses. The resistance to the total dose of radiation rises by three orders of magnitude.

Keywords: semiconductor, thin films, silicon nitride, silicon oxide, ionizing radiation, heterostructure, silicon on insulator, radianion hardness, charge, interface

Abstract: The article is devoted to a hot topic – the development of the method of express control of the liquid packed-up products without opening the container. Today, up to 30% of all engine oil sold in Russia is counterfeit, as well as 40% of cooling and 50% of brake fluids. Thus, the relevance of the development of methods of express control and the systems of identification of the liquid packed-up products is doubtless. Therefore, it is necessary to synthesize the necessary methods and means to offer to producers and trade organizations for use. The author used an express method of weight electrometriс measurements and a comparative analysis with "images of standards" for identification of quality and identification of counterfeit production. The object of the research is the standards of the Castrol Magnatec engine oil and samples of counterfeit production regarding registration of their electric and mechanical characteristics and also parameters and designs of the container in which they are packaged. The results of the research have shown that the offered method and means of its implementation can provide absolute protection of the consumer from the low-quality and counterfeit liquid packed-up production.

Keywords: dielectric permeability, express method, electromety of materials, comparative analysis, quality of production, density, kinematic viscosity, dynamic viscosity, immitance measuring instrument, capacitor sensor

Abstract: The paper provides the method of diagnostics and liquid control unification by determining the dynamic and kinematic viscosity which are the main characteristics of easily flammable and combustible liquids (EFL and CL). "The float-operated design" of a crucible thermo-electro-dilatometer on thermoacoustic rod wave guide is offered, that can be used as a viscometer by applying the developed physical and mathematical models. The essential factor is that both kinematic and dynamic viscosity of EFL and CL are defined in the range of negative and positive temperatures, up to the spontaneous ignition temperature. The offered methodology can find application in the new edition of GOST 12.1.044 "Fire-and-explosion hazard of substances and materials". The novelty of the research is that the function of the viscometer is developed for a thermo-electrodilatometer crucible in the BETA-analyzer, that allows measuring both kinematic and dynamic viscosity of EFL and CL in the range of negative and positive temperatures, up to temperatures of their spontaneous ignition.

Keywords: thermo - the electro-dilatometer, crucible, combustible liquid, easily flammable liquid, dynamic viscosity, kinematic viscosity, thermoanalytical method, thermoacoustic rod a wave guide, BETA-analyzer, viscometer

Abstract: Aluminum and its alloys are the main metallization materials. With an increase in degree of integration the role of interconnections rises: they occupy a growing area of the crystal, the density of the package increases, which leads to a decrease in the thickness and width of the conductive tracks. In nanodimensional structures the value of the current density sufficient for the development of electromigration effects occurs at currents of 50-100 mA. The article explores the factors affecting the mechanism of destruction of the integrated circuits' metallization due to electromigration. The author studies metallization lines at different stages of their destruction by electromigration with the help of raster scanning and transmission electron microscopes. In general, the main problem associated with high-temperature application of aluminum metallization is the large grain size and surface roughness, which makes alignment on such a metal layer difficult. The results of the experiments lead to the conclusion that geometric factors play a dominant role in the mechanism of destruction of metallization of integrated circuits due to electromigration.

Keywords: metallization, integrated circuit, electromigration, semiconductor, contact, reliability, aluminum, silicon, deposition, current noise

Abstract: Aluminium with its alloys is the basic material of integrated circuits metallization. Use of VLSIC toughens the requirements to the parameters of metallization, which determine its reliability, such as surface resistance, step coating quality, number and sizes of tension-caused voids, and electromigration tolerance. Poor quality of metallization is one of the most dangerous defects in semiconductor technology of integrated circuits. Electromigration can cause failure when passing high-density current through metallization. The materials have been tested in order to estimate the intensity of metal resistance variation caused by electromigration. Based on the results of these tests, the authors conclude that geometrical factors play a dominant role in the mechanism of erosion of integrated circuits metallization caused by electromigration. With regard to the tests, the authors formulate recommendations about the transition from the sputtering technique to evaporation deposition. 

Keywords: semiconductor, electronics, technology, electromigration, aluminum, circuit, metallization, connection, silicon, reliability

Abstract: The research subject is adaptation of SPICE-like programs of simulation of electric circuits and thermal processes simultaneously using the example of Peltier thermos-elements. Despite apparent simplicity of such physical object, practice shows that to operate such device one should realize a complex algorithm, since the current of a TE module, which is the only directly managed parameter, determines a complex function of impact on the work of the device. It can be seen when trying to solve the tasks of improvement of thermal stabilization and energy efficiency simultaneously. Recently electronic devices have been developed via computer simulation programs, but such software tools haven’t been used for engineering objects of complex physical nature so far. The author of this work attempts to unite the electronic simulation methods with the consideration of objects of nonelectric nature, i.e. the author offers a computer model of a thermoelectric converter based on the Peltier effect. A thermal part of a simulation model is based on the electrostatic analogy principle with the conversion of thermal values into electric ones. The thermal part of a device is divided into electric-like elements with formation of thermal circuits. The presents SPICE models of a thermoelectric cooler and a thermostat help effectively analyze thermal and electric parameters of a wide range of devices, which contain both internal and boundary sources of heat and cold, including heat pumps based on different physical principles. The author arrives at appropriate coincidence of simulation results and experimental data. It allows using the developed model for solving an inverse problem – analysis of an electric generator based on the Seebeck effect. 

Keywords: temperature control system, heat conduction equation, SPICE simulator, Peltier element, computer simulation, thermoelectric cooling module, thermoelectric converter, heat pump, cooler, heat process simulation

Abstract: Silicon-on-sapphire structures serve as a base for the production of radiation-resistant integration circuits, which are very important for space industry, nuclear energetics, and the military sphere. The authors study the silicon-on-sapphire hetero-epitaxial mechanism for the subsequent creation of low-defectiveness transistor structures. Using the Rutherford backscattering, the authors study epitaxial layers of silicon, grown on sapphire substrate. Using the Auger analysis, the authors define the composition and the depth of the transitional layer of silicon-sapphire. The authors ascertain that silicon-to-sapphire bond is performed through tetrahedral sited oxygen. Defectiveness growth can be observed in the regions of spectrum of epitaxial layers, corresponding to the transitional region between the silicon layer and the sapphire substrate, and contributing to ion channeling. Account of an irregular character of the silicon-sapphire transition allows establishing causal link between the charge on the silicon-on-sapphire structure border and leakage current of field emission transistor. The authors develop the method of creation of a semiconductor device with improved parameters both in leakage currents and in structure defects density. 

Keywords: heteroepitaxy, ion implantation, mechanical tension, defect density, crystalline lattice, leakage current, substrate, silicon-on-sapphire, Auger analysis, Rutherford backscattering

Abstract: Since 2010 the Government of the Russian Federation has organized competitions for financial support of scientific research projects, realized under the guidance of the leading foreign scholars for the purpose of achieving the high level research results and creating the “world level laboratories” in universities. But as early as in 2010 the implementation of the “Decree 220” practically broke down due to the large number of applicants (512 projects), while the money was enough only for 40 winners. At that, there were 15 “winners” in Moscow, 6 in St. Petersburg, 4 in Nizhny Novgorod, 3 and 3 in Novosibirsk and Tomsk. In 2011 the “history repeated itself”: 517 applications were registered for the competition, and money was enough only for 39, among them 14 “winners” were in Moscow, 5 in St. Petersburg, 3 and 3 in Nizhny Novgorod and Novosibirsk, 1 in Tomsk. In 2012 half as much projects came for the competition – 719, and only 42 winners got support: among them 15 from Moscow, 5 from St. Petersburg, 2 and 2 from Novgorod and Tomsk and 6 from the Siberian branch of the Russian Academy of Sciences. Here the obvious questions arise: Where did the 1500 unsupported projects go? Were they really “undeserving” the government financial support? This article describes the application project of 2012 No 2012-220-03-247 under the guidance of Doctor of Physical and Mathematical Sciences, Professor Zavjrotnev Yu.D. from Donetsk Institute for Physics and Engineering. The project was aimed at the creation of a unique baro-electro-thermoacoustic (BETA) analyzer, which would leave behind all the existing synchronous thermal analysis (STA) mechanisms, and the interdepartmental laboratory based in Donetsk Institute for Physics and Engineering. 

Keywords: vector function of life cycle, electrometry of materials, synchronous thermal analysis, acoustic emission, liquid medium, aging of materials, phase changes, criteria of similarity, baro-electro-thermoacoustic analysis, magnetic properties of substances

Abstract: The authors examine the methodology of synchronized methods and means of thermal analysis with the method and means of acoustic emission and electrometry. It is demonstrated that the proposed complexation allowed acquiring a multi-parameter vector function of the life cycle of the substance or material being researched, as well as calculate the parameters of their “aging”, since despite the established practice, a proposal is made using thermobaric cycling of the samples, which speeds-up the degradation of their qualities similarly to the process of exploitation. The proposed methodology of complexation of the methods and means of thermal analysis with the method and means of acoustic emission (AE) and electrometry gave rise to a new method – thermobaric densymmetry. The novelty of the proposed approach is protected by two patents registered in the Russian Federation. The main solution for realization of synchronization of the aforementioned methods is the calculation and creation of the melting pot of thermo-electro-dilameter (TED) on the thermoacoustic rod/waveguide (TAWG), which allowed taking the sensory AE sensors out of the zone of high temperatures and pressures.

Keywords: aging of materials, thermobaric cycling , acoustic emission, dynamic mechanical analysis, dielectric analysis, dilatometry, thermogravimetry, defect formation, destruction, pyrolysis