Abstract: The study of the degradation of metal-oxide semiconductor MOS structures with nitration of the gate oxide under the influence of hot electrons and ionizing radiation was carried out. Two factors were investigated that cause the degradation of MOS structures and on which nitration has a different effect. The results of ionizing irradiation on MOS structures with thermal nitration at different temperatures and duration of nitration and without nitration were obtained. It is shown that the temperature and duration of the nitration operation reduce the magnitude of the voltage change. The observed voltage changes may be due to an increase in the effect of electron traps, or a decrease in the effect of hole traps. The degradation of the characteristics of the devices under the influence of radioactive radiation and hot electrons substantially depend on the temperature and duration of thermal nitration. The risk of radiation exposure is constantly decreasing with increasing degree of nitration, and the risk of degradation under the action of hot electrons decreases with increasing degree of nitration, but with a further increase in the degree of nitration also increases.

Abstract: The greatest success of ion implantation has been achieved in the field of planar technology of semiconductor devices and integrated circuits. The development of devices with elements of nanoparticles, including the active region of which are metal nanoparticles in a dielectric matrix, has been greatly developed. The aim of the work is to simulate the process of ion implantation of a structure consisting of gold nanoparticles in a silicon dioxide matrix and calculations of the distribution of doping ions, cascades of displaced matrix ions and nanoparticles, as well as the distribution of ions reflected from the nanoparticles. The implantation conditions vary depending on the position of the projection of a point on the surface of the structure on the horizontal radius of the nanoparticle from the center to the periphery. A physical model of the process of ion implantation of gold nanoparticles located in a silicon dioxide matrix has been compiled. The process of ionic doping of the structure with boron and arsenic ions was simulated for different cross sections, and graphs of the distribution of doping ions, recoil atoms, reflected and sputtered ions were obtained depending on the coordinate from the center of the nanoparticle.

Abstract: The processes of formation of radiation-resistant heterostructures with required set of structural and electrophysical parameters, taking into account the influence of ionizing radiation effects, allowing to expand the field of their application and improve the reliability of electronic equipment are described. The influence of irradiation on the parameters of hetero- and semiconductor structures made according to various design-technological variants is studied. It is shown that the charge density in the dielectric increases with increasing dose of ionizing particles, reaches saturation at a dose of 108- 109 rad, and the value of the built-in charge and mechanical stresses in multilayer dielectric systems decrease due to the formation of an intermediate charge at the dielectric interface and the presence of a potential barrier between them. By adjusting the rate of introduction and characteristics of radiation centers during irradiation type, method of growing and the level of doping material, and the integrated flux density of the irradiation, the sample temperature during irradiation may purposefully alter the electrical properties of heterostructures and electrical parameters of devices and integrated circuits. Developed methods, for radiation resistant heterostructures forming, reduces charge formation at silicon-oxide interface. SOI technology on optimized structure, shows good results, even at high radiation doses. The resistance to the total dose of radiation rises by three orders of magnitude.

Abstract: Aluminium with its alloys is the basic material of integrated circuits metallization. Use of VLSIC toughens the requirements to the parameters of metallization, which determine its reliability, such as surface resistance, step coating quality, number and sizes of tension-caused voids, and electromigration tolerance. Poor quality of metallization is one of the most dangerous defects in semiconductor technology of integrated circuits. Electromigration can cause failure when passing high-density current through metallization. The materials have been tested in order to estimate the intensity of metal resistance variation caused by electromigration. Based on the results of these tests, the authors conclude that geometrical factors play a dominant role in the mechanism of erosion of integrated circuits metallization caused by electromigration. With regard to the tests, the authors formulate recommendations about the transition from the sputtering technique to evaporation deposition. 

Abstract: The research is devoted to one of the physical nanoelectronic effect – resonant tunneling. The authors provide numerical calculations for constructing the MIS-structure based diod and modeling its characteristics. The metal-oxide-silicon semiconductor in the severe depletion mode next to the doped semiconductor has a similar structure. The authors establish the MIS-structure energy band diagram, define energy levels and wave functions of an electron in the quantum well and during tunneling and calcuate the probability of tunneling based on the amounnt of the voltage applied. In the course of calculations the authors use the PTC Mathcad Prime 3.1 visual environment for mathematical modeling and technical computing. The results of the computer modeling allow to define external limit voltage including the amount of voltage that leads to the dielectric breakdown. In addition, the authors define the qualitative dependency between the MIS-structure voltage and the height and width of the energy barrier. The model developed by the authors takes into account the joint influence of several factors which is proved by the coordination of recorded current voltrage characteristic with the experimental characteristics.